US Patent Issued to Taiwan Semiconductor Manufacturing on July 29 for "Semiconductor device having thin bottom channel and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,322, issued on July 29, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device having thin bottom channel and manufacturing method thereof" was invented by Wang-Chun Huang (Kaohsiung, Taiwan), Hou-Yu Chen (Hsinchu County, Taiwan), Jin Cai (Hsinchu, Taiwan) and Chih-Hao Wang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes semiconductor nanosheets, a gate structure, and a dielectric spacer. The semiconductor nanosheets are vertically stacked over each other, disposed above a semiconductor substrate, and serve as channel regions. A bottommost semiconduc...