ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,364, issued on July 29, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Semiconductor device and method of manufacture" was invented by Chia-Wei Hsu (Taipei, Taiwan), Pei Ying Lai (Hsinchu, Taiwan), Cheng-Hao Hou (Hsinchu, Taiwan), Xiong-Fei Yu (Hsinchu, Taiwan) and Chi On Chui (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor devices and methods which utilize a passivation dopant to passivate a gate dielectric layer are provided. The passivation dopant is introduced to the gate dielectric layer through a work function layer using a process such as a soaking method. The passivation dopant i...