US Patent Issued to Taiwan Semiconductor Manufacturing on July 29 for "Semiconductor device and method for manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,374,616, issued on July 29, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device and method for manufacturing the same" was invented by Po-Hsien Cheng (Hsinchu, Taiwan), Zhen-Cheng Wu (Taichung, Taiwan), Tze-Liang Lee (Hsinchu, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor device includes providing a base device having a top dielectric layer, forming a sacrificial layer on the top dielectric layer, and patterning the sacrificial layer to form openings. The method also includes depositing first protective dielectric layer and a l...