US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 29 for "Self-aligned spacers for multi-gate devices and method of fabrication thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,343, issued on July 29, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Self-aligned spacers for multi-gate devices and method of fabrication thereof" was invented by Kuo-Cheng Ching (Hsinchu County, Taiwan), Shi Ning Ju (Hsinchu, Taiwan), Guan-Lin Chen (Hsinchu County, Taiwan), Kuan-Lun Cheng (Hsin-Chu, Taiwan) and Chih-Hao Wang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes channel members vertically stacked, a gate structure wrapping around the channel members, a gate spacer disposed on sidewalls of the gate structure, an epitaxial feature abutting the channel...