US Patent Issued to Taiwan Semiconductor Manufacturing on July 29 for "Polysilicon removal in word line contact region of memory devices" (Taiwanese Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,297, issued on July 29, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Polysilicon removal in word line contact region of memory devices" was invented by Yen-Jou Wu (Hsinchu, Taiwan), Hsin-Hui Lin (Hsinchu, Taiwan), Yu-Liang Wang (Hsinchu, Taiwan), Chih-Ming Lee (Tainan, Taiwan), Keng-Ying Liao (Tainan, Taiwan), Ping-Pang Hsieh (Tainan, Taiwan) and Su-Yu Yeh (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes a patterning process for a strap region in a memory cell for the removal of material between polysilicon lines. The patterning process includes depositing a first hard...