US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 29 for "Photoresist layer outgassing prevention" (Taiwanese Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,374,548, issued on July 29, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Photoresist layer outgassing prevention" was invented by Yen-Yu Chen (Hsinchu, Taiwan), Chih-Cheng Liu (Hsinchu, Taiwan), Yi-Chen Kuo (Hsinchu, Taiwan), Jr-Hung Li (Hsinchu, Taiwan), Tze-Liang Lee (Hsinchu, Taiwan), Ming-Hui Weng (Hsinchu, Taiwan) and Yahru Cheng (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate and forming a dehydrated film over the photoresist layer. The photoresist layer is selectively exposed to actinic radi...