US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 29 for "Passivation structure for metal pattern" (Taiwanese Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,374,638, issued on July 29, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Passivation structure for metal pattern" was invented by Ching-Hung Kao (Tainan, Taiwan), Kuei-Yu Deng (Taichung, Taiwan) and Tzy-Kuang Lee (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and method of manufacturing the same are provided. The semiconductor device may include a substrate, a first via, a first pad, a second pad, and a first passivation layer. The first pad may be over the substrate. The second pad may be over the substrate. The second pad may be parallel to the first pad. The first passiva...