US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 29 for "Nanosheet devices with hybrid structures and methods of fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,365, issued on July 29, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Nanosheet devices with hybrid structures and methods of fabricating the same" was invented by Kuo-Cheng Chiang (Hsinchu County, Taiwan), Shi Ning Ju (Hsinchu, Taiwan), Guan-Lin Chen (Hsinchu County, Taiwan), Jung-Chien Cheng (Tainan, Taiwan), Chih-Hao Wang (Hsinchu County, Taiwan) and Kuan-Lun Cheng (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a first stack of active channel layers and a second stack of active channel layers disposed over a semiconductor substrate, where the second stackin...