US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 29 for "Method for fabricating integrated circuit device with two gate structures" (Taiwanese Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,346, issued on July 29, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method for fabricating integrated circuit device with two gate structures" was invented by Yu-Che Chou (Yilan County, Taiwan), Li-Cheng Teng (Hsinchu, Taiwan), Wan-Hsuan Chung (Taichung, Taiwan) and Chao-Hsin Chien (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit device includes a semiconductor substrate, a first gate structure, a channel layer, source and drain features, a second gate structure, a first contact, and a second contact. The first gate structure is over the semiconductor substrate. The first g...