ALEXANDRIA, Va., July 30 -- United States Patent no. 12,374,419, issued on July 29, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Method and system for replacement of memory cells" was invented by Hiroki Noguchi (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory system is provided. The memory system includes an error correction code circuit configured to correct a maximum of N error bits in each of multiple read data and a monitor circuit configured to monitor multiple fail word addresses associated with M error bits, and further configured to output a first word address in the fail word addresses to replace first memory locations corresponding to the f...