US Patent Issued to Taiwan Semiconductor Manufacturing on July 29 for "Memory device having interface charge traps" (Taiwanese Inventor)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,374,405, issued on July 29, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory device having interface charge traps" was invented by Chao-I Wu (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated chip including a substrate. A gate layer is over the substrate. A channel layer is over the substrate and vertically spaced apart from the gate layer. A ferroelectric layer is directly between the channel layer and the gate layer. A pair of source/drain electrodes are laterally spaced apart over the channel layer. A plurality of charge traps are along an interface between the ferroelectric layer and th...