US Patent Issued to Taiwan Semiconductor Manufacturing on July 29 for "Memory cell having source or drain electrode with kink portion, memory array and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,310, issued on July 29, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory cell having source or drain electrode with kink portion, memory array and manufacturing method thereof" was invented by Yu-Wei Jiang (Hsinchu, Taiwan), Tsuching Yang (Taipei, Taiwan), Sheng-Chih Lai (Hsinchu County, Taiwan), Feng-Cheng Yang (Hsinchu County, Taiwan) and Chung-Te Lin (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A 3D memory array including multiple memory cells and a method of manufacturing the same are provided. Each memory cell includes a first isolation structure, source and drain electrodes, a gate layer,...