US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 29 for "Gate stacks for stack-fin channel I/O devices and nanowire channel core devices" (Taiwanese Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,363, issued on July 29, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Gate stacks for stack-fin channel I/O devices and nanowire channel core devices" was invented by Chao-Ching Cheng (Hsinchu, Taiwan), Wei-Sheng Yun (Taipei, Taiwan), I-Sheng Chen (Hsinchu, Taiwan), Shao-Ming Yu (Hsinchu County, Taiwan), Tzu-Chiang Chen (Hsinchu, Taiwan) and Chih Chieh Yeh (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate having an I/O region and a core region; a first transistor in the I/O region; and a second transistor in the core region, wherein the first transistor includ...