ALEXANDRIA, Va., July 30 -- United States Patent no. 12,375,080, issued on July 29, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Fuse structure" was invented by Tun-Jen Chang (Hsinchu, Taiwan), Bao-Ru Young (Hsinchu, Taiwan) and Tung-Heng Hsieh (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A fuse structure includes first and second transistors where each of the first and the second transistors has a source terminal, a drain terminal, and a gate terminal; a first source/drain contact disposed on the source terminal of the first transistor; a second source/drain contact disposed on the drain terminal of the second transistor; an insulator disposed latera...