US Patent Issued to Taiwan Semiconductor Manufacturing on July 29 for "Fin field-effect transistor device and method" (Taiwanese Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,357, issued on July 29, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Fin field-effect transistor device and method" was invented by Sai-Hooi Yeong (Zhubei, Taiwan), Kai-Hsuan Lee (Hsinchu, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes depositing an interlayer dielectric (ILD) over a source/drain region, implanting impurities into a portion of the ILD, recessing the portion of the ILD to form a trench, forming spacers on sidewalls of the trench, the spacers including a spacer material, forming a source/drain contact in the trench and removing the spacers an...