US Patent Issued to Taiwan Semiconductor Manufacturing on July 29 for "Ferroelectric memory device and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,309, issued on July 29, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Ferroelectric memory device and method of forming the same" was invented by Peng-Chun Liou (Tainan, Taiwan), Zhiqiang Wu (Hsinchu County, Taiwan), Chung-Wei Wu (Hsin-Chu County, Taiwan) and Ya-Yun Cheng (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A ferroelectric memory device includes a multi-layer stack, a ferroelectric layer, and channel layers. The multi-layer stack is disposed on a substrate and includes conductive layers and dielectric layers stacked alternately. The ferroelectric layer has a curvy profile and is disposed...