US Patent Issued to Taiwan Semiconductor Manufacturing on July 29 for "Ferroelectric memory device and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,347, issued on July 29, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Ferroelectric memory device and method of forming the same" was invented by Kuo-Chang Chiang (Hsinchu, Taiwan), Yu-Chuan Shih (Hsinchu, Taiwan), Chun-Chieh Lu (Taipei, Taiwan), Po-Ting Lin (Taichung, Taiwan), Hai-Ching Chen (Hsinchu, Taiwan), Sai-Hooi Yeong (Hsinchu County, Taiwan), Yu-Ming Lin (Hsinchu, Taiwan) and Chung-Te Lin (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a ferroelectric memory device and a method of forming the same. The ferroelectric memory device includes: a gate electrode; a ferroelectric layer,...