US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 29 for "Cut metal gate process for reducing transistor spacing" (Taiwanese Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,374,542, issued on July 29, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Cut metal gate process for reducing transistor spacing" was invented by Ming-Chang Wen (Kaohsiung, Taiwan), Chang-Yun Chang (Taipei, Taiwan), Hsien-Chin Lin (Hsinchu, Taiwan) and Hung-Kai Chen (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a substrate; an isolation structure over the substrate; a first fin extending from the substrate and through the isolation structure; a first source/drain structure over the first fin; a contact etch stop layer over the isolation structure and contacting a fir...