US Patent Issued to Taiwan Semiconductor Manufacturing on July 29 for "Compact electrical connection that can be used to form an SRAM cell and method of making the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,277, issued on July 29, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Compact electrical connection that can be used to form an SRAM cell and method of making the same" was invented by Yu-Kuan Lin (Hsinchu, Taiwan), Chang-Ta Yang (Hsinchu, Taiwan), Ping-Wei Wang (Hsinchu, Taiwan), Kuo-Yi Chao (Hsinchu, Taiwan) and Mei-Yun Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit structure in which a gate overlies channel region in an active area of a first transistor. The first transistor includes a channel region, a source region and a drain region. A conductive contact is coupled t...