US Patent Issued to Taiwan Semiconductor Manufacturing on July 29 for "Capping layers in metal gates of transistors" (Taiwanese Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,361, issued on July 29, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Capping layers in metal gates of transistors" was invented by Tsung-Ta Tang (Hsinchu, Taiwan), Yi-Ting Wang (Kaohsiung, Taiwan), Chung Ta Chen (Hsinchu, Taiwan) and Hsien-Ming Lee (Changhua, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device includes forming a gate electrode in a wafer. The formation of the gate electrode includes depositing a work-function layer, after the work-function layer is deposited, performing a treatment on the wafer, wherein the treatment is performed by soaking the wafer usi...