ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,337, issued on July 29, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd..
"Air inner spacers" was invented by Fo-Ju Lin (Keelung, Taiwan), Fang-Wei Lee (Hsinchu, Taiwan), Chih-Long Chiang (Hsinchu, Taiwan), Li-Te Lin (Hsinchu, Taiwan) and Pinyen Lin (Rochester, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes a method to form a semiconductor device with air inner spacers. The method includes forming a semiconductor structure on a first side of a substrate. The semiconductor structure includes a fin structure having multiple semiconductor layers on the substrate, an epitaxial structure on the substrate a...