US Patent Issued to Taiwan Semiconductor Manufacturing on July 22 for "Vertical access transistors and methods for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,328, issued on July 22, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Vertical access transistors and methods for forming the same" was invented by Ming-Yen Chuang (Hsinchu, Taiwan) and Katherine H. Chiang (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A plurality of vertical stacks may be formed over a substrate. Each of the vertical stacks includes, from bottom to top, a bottom electrode, a dielectric pillar, and a top electrode. A continuous active layer may be formed over the plurality of vertical stacks. A gate dielectric layer may be formed over the continuous active layer. The continuous a...