US Patent Issued to Taiwan Semiconductor Manufacturing on July 22 for "Thin film transistor including a compositionally- graded gate dielectric and methods for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,354, issued on July 22, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Thin film transistor including a compositionally- graded gate dielectric and methods for forming the same" was invented by Wu-Wei Tsai (Hsinchu, Taiwan), Chun-Chieh Lu (Taipei, Taiwan), Hai-Ching Chen (Hsinchu, Taiwan), Yu-Ming Lin (Hsinchu, Taiwan) and Sai-Hooi Yeong (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A thin film transistor may be manufactured by forming a gate electrode in an insulating layer over a substrate, forming a gate dielectric over the gate electrode and the insulating layer, forming an active layer over the ...