US Patent Issued to Taiwan Semiconductor Manufacturing on July 22 for "Thin film transfer using substrate with etch stop layer and diffusion barrier layer" (Taiwanese Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,352, issued on July 22, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Thin film transfer using substrate with etch stop layer and diffusion barrier layer" was invented by Eugene I-Chun Chen (Taipei, Taiwan), Ru-Liang Lee (Hsinchu, Taiwan), Chia-Shiung Tsai (Hsinchu, Taiwan) and Chen-Hao Chiang (Jhongli, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device includes: forming an etch stop layer over a substrate; forming a first diffusion barrier layer over the etch stop layer; forming a semiconductor device layer over the first diffusion barrier layer, the semiconductor devic...