US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 22 for "Semiconductor structures and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,368,094, issued on July 22, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor structures and methods of forming the same" was invented by Mao-Nan Wang (Kaohsiung, Taiwan), Yuan-Yang Hsiao (Taipei, Taiwan), Chen-Chiu Huang (Taichung, Taiwan) and Dian-Hau Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Passive devices are provided. In an embodiment, a passive device includes a substrate comprising a first region and a second region, a first lower contact feature and a second lower contact feature in a dielectric layer and directly over the first region and the second region, respectively...