ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,316, issued on July 22, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor memory devices and methods of manufacturing thereof" was invented by Meng-Han Lin (Hsinchu, Taiwan) and Chia-En Huang (Xinfeng Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first memory array which includes a first memory string including a plurality of first memory cells arranged in a vertical direction. The first memory array further includes a first conductive structure operatively coupled to the first memory string that extends through the first memory array in the vertical dire...