US Patent Issued to Taiwan Semiconductor Manufacturing on July 22 for "Semiconductor devices with tunable low-K inner air spacers" (Taiwanese Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,388, issued on July 22, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor devices with tunable low-K inner air spacers" was invented by Chen-Han Wang (Zhubei, Taiwan), Keng-Chu Lin (Ping-Tung, Taiwan), Shuen-Shin Liang (Hsinchu County, Taiwan), Tetsuji Ueno (Hsinchu, Taiwan) and Ting-Ting Chen (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes a method of fabricating a semiconductor structure that includes forming a fin structure on a substrate, forming a polysilicon gate structure on a first portion of the fin structure, forming an opening in a second porti...