US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 22 for "Semiconductor device structure including dielectric region with plurality of different oxidation regions" (Taiwanese Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,384, issued on July 22, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device structure including dielectric region with plurality of different oxidation regions" was invented by I-Ming Chang (ShinChu, Taiwan), Jung-Hung Chang (Changhua, Taiwan), Yao-Sheng Huang (Kaohsiung, Taiwan), Huang-Lin Chao (Hsinchu, Taiwan), Chung-Liang Cheng (Changhua, Taiwan) and Hsiang-Pi Chang (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure is provided. The semiconductor device structure includes a source/drain epitaxial feature disposed over a substrate, a plurality of...