US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 22 for "Semiconductor device having air gap and method for manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,368,073, issued on July 22, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device having air gap and method for manufacturing the same" was invented by Hung-Yu Yen (Hsinchu, Taiwan) and Keng-Chu Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor device includes: forming a patterned mask on a patterned structure disposed on a substrate, such that a first mask portion and a second mask portion of the patterned mask are disposed on a first interconnect feature and a second interconnect feature of the patterned structure, respectively; and subjecti...