ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,387, issued on July 22, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Semiconductor device and method" was invented by Chao-Ching Cheng (Hsinchu, Taiwan), Tzu-Chiang Chen (Hsinchu, Taiwan), Chen-Feng Hsu (Hsinchu, Taiwan), Yu-Lin Yang (Baoshan Township, Taiwan), Tung Ying Lee (Hsinchu, Taiwan) and Chih Chieh Yeh (Taipei, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Nanowire devices and fin devices are formed in a first region and a second region of a substrate. To form the devices, alternating layers of a first material and a second material are formed, inner spacers are formed adjacent to the layers of the...