ALEXANDRIA, Va., July 23 -- United States Patent no. 12,368,120, issued on July 22, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device and method" was invented by Chen-Shien Chen (Zhubei, Taiwan), Ting-Li Yang (Tainan, Taiwan), Po-Hao Tsai (Taoyuan, Taiwan), Chien-Chen Li (Hsinchu, Taiwan) and Ming-Da Cheng (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an embodiment, a device includes: a passivation layer on a semiconductor substrate; a first redistribution line on and extending along the passivation layer; a second redistribution line on and extending along the passivation layer; a first dielectric layer on the first redistribution line,...