US Patent Issued to Taiwan Semiconductor Manufacturing on July 22 for "Protrusion field-effect transistor and methods of making the same" (Belgian Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,360, issued on July 22, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Protrusion field-effect transistor and methods of making the same" was invented by Marcus Johannes Henricus van Dal (Linden, Belgium), Gerben Doornbos (Kessel-Lo, Belgium) and Georgios Vallianitis (Heverlee, Belgium).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor, an integrated semiconductor device, and methods of making the same are provided. The transistor includes a dielectric layer having a plurality of dielectric protrusions, a channel layer conformally covering the protrusions of the dielectric layer to form a plurality of trench...