US Patent Issued to Taiwan Semiconductor Manufacturing on July 22 for "Plural gate oxide structures with different thicknesses in semiconductor devices" (Taiwanese Inventor)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,385, issued on July 22, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Plural gate oxide structures with different thicknesses in semiconductor devices" was invented by Chung-Liang Cheng (Changhua County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device with different gate structure configurations and a method of fabricating the same are disclosed. The method includes forming first and second nanostructured channel regions on first and second fin structures, forming first and second oxide layers with first and second thicknesses, forming a dielectric layer with first and second layer porti...