US Patent Issued to Taiwan Semiconductor Manufacturing on July 22 for "Pixel device on deep trench isolation (DTI) structure for image sensor" (Taiwanese Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,422, issued on July 22, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Pixel device on deep trench isolation (DTI) structure for image sensor" was invented by Seiji Takahashi (Hsinchu, Taiwan), Jhy-Jyi Sze (Hsin-Chu, Taiwan) and Tzu-Hsiang Chen (Xihu Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a CMOS image sensor. The image sensor comprises a pixel region comprising a photodiode disposed within a substrate. A deep trench isolation (DTI) ring encloses the photodiode from top view and extends from a back-side to a first position within the substrate from cross-secti...