US Patent Issued to Taiwan Semiconductor Manufacturing on July 22 for "MFM device with an enhanced bottom electrode" (Taiwanese Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,327, issued on July 22, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"MFM device with an enhanced bottom electrode" was invented by Harry-Hak-Lay Chuang (Zhubei, Taiwan), Fu-Chen Chang (New Taipei, Taiwan), Tzu-Yu Chen (Kaohsiung, Taiwan), Sheng-Hung Shih (Hsinchu, Taiwan) and Kuo-Chi Tu (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a ferroelectric memory device that includes a bottom electrode, a ferroelectric structure overlying the bottom electrode, and a top electrode overlying the ferroelectric structure where the bottom electrode includes molybdenum."

The p...