US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 22 for "Method of manufacturing semiconductor device including passivation layer" (Taiwanese Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,368,090, issued on July 22, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of manufacturing semiconductor device including passivation layer" was invented by Jing-Cheng Lin (Hsinchu, Taiwan), Li-Hui Cheng (New Taipei, Taiwan) and Po-Hao Tsai (Taoyuan County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device includes following operations. A substrate is received. An electrical conductor is formed over a surface of the substrate. A photo-curable material is selectively dispensed over the surface of the substrate. The photo-curable material is irradiated to for...