US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 22 for "Method of manufacturing a semiconductor device and a semiconductor device" (Taiwanese Inventor)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,376, issued on July 22, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of manufacturing a semiconductor device and a semiconductor device" was invented by Ching-Hung Kao (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a method of manufacturing a semiconductor device, first and second fin structures are formed over a substrate, an isolation insulating layer is formed over the substrate, a gate structure is formed over channel regions of the first and second fin structures, source/drain regions of the first and second fin structure are recessed, and an epitaxial source/drain structure is fo...