ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,390, issued on July 22, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method for forming semiconductor structure with high aspect ratio" was invented by Han-Pin Chung (Kaohsiung, Taiwan), Chih-Tang Peng (Zhubei, Taiwan) and Tien-I Bao (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and a method for forming the same are provided. The method includes forming a first protruding structure and a second protruding structure over a substrate, and forming a first insulation material layer on the first protruding structure and the second protruding structure. The method includes ...