US Patent Issued to Taiwan Semiconductor Manufacturing on July 22 for "Method and system for forming metal-insulator-metal capacitors" (Taiwanese Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,336, issued on July 22, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method and system for forming metal-insulator-metal capacitors" was invented by Wei-Liang Chen (Hsinchu, Taiwan), Yu-Lung Yeh (Hsinchu, Taiwan), Chihchous Chuang (Hsinchu, Taiwan), Yen-Hsiu Chen (Hsinchu, Taiwan), Tsai-Ji Liou (Hsinchu, Taiwan), Yung-Hsiang Chen (Hsinchu, Taiwan) and Ching-Hung Huang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor processing system is provided to form a capacitor dielectric layer in a metal-insulator-metal capacitor. The semiconductor processing system includes a precursor tank conf...