US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 22 for "Method and structure of cut end with self-aligned double patterning" (Taiwanese Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,368,046, issued on July 22, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Method and structure of cut end with self-aligned double patterning" was invented by Hsi-Wen Tien (Hsinchu County, Taiwan), Wei-Hao Liao (Hsinchu, Taiwan), Pin-Ren Dai (Hsinchu, Taiwan), Chih Wei Lu (Hsinchu, Taiwan) and Chung-Ju Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary method of forming a semiconductor device comprises receiving a structure including a substrate and a first hard mask over the substrate, the first hard mask havin...