US Patent Issued to Taiwan Semiconductor Manufacturing on July 22 for "Memory device in which latch is coupled to source line and method of operation" (Taiwanese Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,367,932, issued on July 22, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsin-Chu, Taiwan).

"Memory device in which latch is coupled to source line and method of operation" was invented by Yu-Der Chih (Hsin-Chu, Taiwan), Cheng-Hsiung Kuo (Jhubei, Taiwan) and Chung-Chieh Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a column of at least three memory cells and a source line coupled to the source terminal of each memory cell. A source line driver is coupled to the source line, a voltage terminal, and a program voltage source and is switchable between a program operation, an erase operation, an...