US Patent Issued to Taiwan Semiconductor Manufacturing on July 22 for "Memory device having a negative voltage circuit" (Taiwanese Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,367,929, issued on July 22, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory device having a negative voltage circuit" was invented by Yi-Hsin Nien (Hsinchu, Taiwan), Hidehiro Fujiwara (Hsinchu, Taiwan), Chih-Yu Lin (Taichung, Taiwan) and Yen-Huei Chen (Jhudong Township, Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device and a method for operating the memory device are provided. The memory device includes a memory cell and a bit line connected to the memory cell. A negative voltage generator is connected to the bit line. The negative voltage generator, when enabled, is operative to...