US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 22 for "LDMOS device having isolation regions comprising DTI regions extending from a bottom of STI region" (Taiwanese, Chinese Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,368,070, issued on July 22, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"LDMOS device having isolation regions comprising DTI regions extending from a bottom of STI region" was invented by Chun-Chieh Fang (Chiayi County, Taiwan), Chien-Chang Huang (Tainan, Taiwan), Chi-Yuan Wen (Tainan, Taiwan), Jian Wu (Shanghai), Ming-Chi Wu (Kaohsiung, Taiwan), Jung-Yu Cheng (Tainan, Taiwan), Shih-Shiung Chen (Tainan, Taiwan), Wei-Tung Huang (Tainan, Taiwan) and Yu-Lung Yeh (Kaohsiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An LDMOS device comprises a well region, first and second implant regions, a gate electrode, fi...