ALEXANDRIA, Va., July 23 -- United States Patent no. 12,368,076, issued on July 22, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Interconnect structure and methods of forming the same" was invented by Yu-An Chen (Taoyuan, Taiwan), I-Chang Lee (Hsinchu, Taiwan) and Chih-Yuan Ting (Taipei, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An interconnect structure, along with methods of forming such, are described. In some embodiments, the method includes forming a first dielectric layer over one or more devices, forming a first conductive feature in the first dielectric layer, and forming two dielectric features over the first dielectric layer and the first conductiv...