US Patent Issued to Taiwan Semiconductor Manufacturing on July 22 for "Increasing source/drain dopant concentration to reduced resistance" (Taiwanese Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,342, issued on July 22, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Increasing source/drain dopant concentration to reduced resistance" was invented by Yi-Jing Lee (Hsinchu, Taiwan) and Ming-Hua Yu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes recessing a semiconductor fin to form a recess, wherein the semiconductor fin protrudes higher than isolation regions on opposite sides of the semiconductor fin, and performing a first epitaxy to grow a first epitaxy layer extending into the recess. The first epitaxy is performed using a first process gas comprising a silicon-containing ga...