ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,325, issued on July 22, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Gate-last tri-gate FeFET" was invented by Meng-Han Lin (Hsinchu, Taiwan) and Chia-En Huang (Hsinchu County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes an isolation layer; first and second source/drain (S/D) metal electrodes over the isolation layer; a metal gate disposed laterally between the first and the second S/D metal electrodes; a ferroelectric layer on a bottom surface and sidewall surfaces of the metal gate; and an oxide semiconductor layer. The oxide semiconductor layer includes a first po...