US Patent Issued to Taiwan Semiconductor Manufacturing on July 22 for "Fin Field-Effect Transistor device and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,348, issued on July 22, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Fin Field-Effect Transistor device and method of forming the same" was invented by Jian-Jou Lian (Tainan, Taiwan), Chun-Neng Lin (Hsinchu, Taiwan), Chieh-Wei Chen (Taoyuan, Taiwan), Tzu-Ang Chiang (I-lan, Taiwan) and Ming-Hsi Yeh (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device includes surrounding a dummy gate disposed over a fin with a dielectric material; forming a gate trench in the dielectric material by removing the dummy gate and by removing upper portions of a first gate spacer disp...