ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,408, issued on July 22, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"ESD protection circuit, semiconductor system including same, and method for operating same" was invented by Wan-Yen Lin (Hsinchu, Taiwan) and Bo-Ting Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of protecting a device (protected device) (in a semiconductor system from an electrostatic discharge (ESD)) includes: coupling the protected device between a first node and a first reference voltage; coupling an ESD device between the first node and the first reference voltage; and selectively and actively coupling an i...