US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 22 for "Epitaxial layers in source/drain contacts and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,386, issued on July 22, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Epitaxial layers in source/drain contacts and methods of forming the same" was invented by Ding-Kang Shih (New Taipei, Taiwan) and Pang-Yen Tsai (Hsin-Chu Hsian, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes providing a p-type S/D epitaxial feature and an n-type source/drain (S/D) epitaxial feature, forming a semiconductor material layer over the n-type S/D epitaxial feature and the p-type S/D epitaxial feature, processing the semiconductor material layer with a germanium-containing gas, where the processing of the semico...