US Patent Issued to Taiwan Semiconductor Manufacturing on July 22 for "Encapsulated phase change material switch and methods for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,503, issued on July 22, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Encapsulated phase change material switch and methods for forming the same" was invented by Tsung-Hsueh Yang (Taichung, Taiwan), Chang-Chih Huang (Taichung, Taiwan), Fu-Ting Sung (Yangmei, Taiwan) and Kuo-Chyuan Tzeng (Chu-Pei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A dielectric isolation layer having a planar top surface is formed over a substrate. A first electrode and a second electrode are formed over the planar top surface. An insulating matrix layer is formed around the first electrode and the second electrode. A phase change ...